| DC Field | Value | Language |
|---|
| dc.contributor.author | Kostrov, A. I. | - |
| dc.date.accessioned | 2018-10-01T07:22:47Z | - |
| dc.date.available | 2018-10-01T07:22:47Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Kostrov, A. I. Deep submicron radiation hardened static random-access memory IP / A. Kostrov // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 88 – 89. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33070 | - |
| dc.description.abstract | Modern System-on-a-Chip (SoC) is impossible to develop without built-in memory blocks. The
availability of embedded memory enables SoC to perform fast, complex operations with large data
arrays. Therefore the percentage of chip area occupied by various memories is constantly growing.
Design of ICs which include large-scale memory blocks requires special software – IP Memory Block
Compiler that would permit netlist and die topology to be created. Memory compilers allow quickly
and automatically generate specifically sized memory blocks to be used in the design of ASICs. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | Modern System-on-a-Chip | ru_RU |
| dc.subject | Static Random-Access Memory | ru_RU |
| dc.title | Deep submicron radiation hardened static random-access memory IP | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2013
|
