https://libeldoc.bsuir.by/handle/123456789/33946
Title: | Formation of metal-oxide film nanostructures based on anodic alumina with uniformly distributed nanoscale Ta inclusions and their electrical properties |
Authors: | Chernyakova, E. V. Vrublevsky, I. A. Muratova, E. N. Moshnikov, V. A. |
Keywords: | публикации ученых;anodic aluminum oxide;temperature coefficient of resistance |
Issue Date: | 2018 |
Publisher: | Institute of Physics and IOP Publishing Limited |
Citation: | Formation of metal-oxide film nanostructures based on anodic alumina with uniformly distributed nanoscale Ta inclusions and their electrical properties / E. V. Chernyakova [et al.] // Journal of Physics : Conf. Series. – 2018. – 1121. – P. 012010 |
Abstract: | The paper presents the results of studies of the formation of film-metal oxide nanostructures with islet tantalum inclusions on the basis of anodizing processes of bilayer Ta-Al films. The surface resistivity and the temperature coefficient of resistance of such nanostructures were studied. The results obtained show that the proposed method allows us to copy completely the cellular-porous structure of anodic alumina and to form a nanostructured tantalum film of islet character with a dielectric phase in places of pores. |
URI: | https://libeldoc.bsuir.by/handle/123456789/33946 |
DOI: | 10.1088/1742-6596/1121/1/012010 |
Appears in Collections: | Публикации в зарубежных изданиях |
File | Description | Size | Format | |
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Chernyakova_Formation.PDF | 983.25 kB | Adobe PDF | View/Open |
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