| DC Field | Value | Language |
|---|
| dc.contributor.author | Muravev, V. V. | - |
| dc.contributor.author | Mishchenka, V. N. | - |
| dc.date.accessioned | 2019-11-15T09:13:52Z | - |
| dc.date.available | 2019-11-15T09:13:52Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Muravev, V. V. Modeling of electron transfer in graphene on SiC substrate / Muravev V. V., Mishchenka V. N. // International Journal of Nanoscience. – 2019. – Vol. 18, № 3&4. – P. 1940093-1-1940093-3. – DOI : https://doi.org/10.1142/S0219581X19400933. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/37258 | - |
| dc.description.abstract | The results of simulation of electron transfer processes in a single graphene layer on a SiC substrate are presented. High mobility of charge carriers with respect to all known materials makes graphene to be a promising candidate for applications in new semiconductor devices. The prevalence of electron–electron scattering over other types of scattering in the range of moderate field energies in a single graphene layer is established by modeling using the Monte Carlo method. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | World Scientific Publishing Co Pte Ltd | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | graphene | ru_RU |
| dc.subject | semiconductor structure | ru_RU |
| dc.subject | electron transport | ru_RU |
| dc.subject | Monte Carlo method | ru_RU |
| dc.title | Modeling of electron transfer in graphene on SiC substrate | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
