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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/37258
Title: Modeling of electron transfer in graphene on SiC substrate
Authors: Muravev, V. V.
Mishchenka, V. N.
Keywords: публикации ученых;graphene;semiconductor structure;electron transport;Monte Carlo method
Issue Date: 2019
Publisher: World Scientific Publishing Co Pte Ltd
Citation: Muravev, V. V. Modeling of electron transfer in graphene on SiC substrate / V. V. Muravev, V. N. Mishchenka // International Journal of Nanoscience. – 2019. – Vol. 18, № 3&4. – P. 1940093-1–1940093-3.
Abstract: The results of simulation of electron transfer processes in a single graphene layer on a SiC substrate are presented. High mobility of charge carriers with respect to all known materials makes graphene to be a promising candidate for applications in new semiconductor devices. The prevalence of electron–electron scattering over other types of scattering in the range of moderate field energies in a single graphene layer is established by modeling using the Monte Carlo method.
URI: https://libeldoc.bsuir.by/handle/123456789/37258
DOI: https://doi.org/10.1142/S0219581X19400933
Appears in Collections:Публикации в зарубежных изданиях

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