https://libeldoc.bsuir.by/handle/123456789/38540| Title: | Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis |
| Authors: | Dao Dinh Ha Trung Tran Tuan Volcheck, V. S. Stempitsky, V. R. |
| Keywords: | публикации ученых;gallium nitride;trap;transistor;simulation |
| Issue Date: | 2019 |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| Citation: | Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis / Dao Dinh Ha [and others] // International Conference on Advanced Technologies for Communications (ATC-2019): 12 th, The International Conference on Advanced Technologies for Communications, Hanoi, Vietnam, Oct. 17-19, 2019 / Institute of Electrical and Electronics Engineers (IEEE). – Hanoi, 2019. – P. 308 – 312. – DOI: https://doi.org/10.1109/ATC.2019.8924506. |
| Abstract: | The effect of the presence of iron-induced acceptor centers in the gallium nitride high electron mobility transistor is studied using device physics simulations at elevated temperatures (up to 600 K), as a lattice heat flow equation is solved self-consistently with the Poisson and the continuity equations to account for self-heating effects. It is shown that the acceptor centers intentionally introduced in the buffer layer of the device cause a shift of the input characteristics in the positive direction. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/38540 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Dao_Iron_Induced.pdf | 868.97 kB | Adobe PDF | View/Open |
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