DC Field | Value | Language |
dc.contributor.author | Polyakov, I. S. | - |
dc.contributor.author | Поляков, И. С. | - |
dc.date.accessioned | 2021-06-24T06:47:40Z | - |
dc.date.available | 2021-06-24T06:47:40Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Polyakov, I. S. The influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunneling structures / Polyakov I. S. // Радиотехника и электроника : сборник тезисов докладов 57-й научной конференции аспирантов, магистрантов и студентов, Минск, апрель 2021 года / Белорусский государственный университет информатики и радиоэлектроники. – Минск : БГУИР, 2021. – С. 116–118. | ru_RU |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/44396 | - |
dc.description.abstract | This article discusses the concept, essence and application areas of graphene-based four-barrier resonant tunneling structures (RTS). The purpose of this paper is to study the influence of various technological parameters on the electrical characteristics of RTS. The current-voltage characteristics of graphene-based resonant tunneling structures on silicon dioxide (SiO 2 ) and hexagonal boron nitride (h-BN) substrates are simulated for different widths of barriers and quantum wells. The calculations presented were carried out using a numerical model based on the Schrödinger equation. | ru_RU |
dc.language.iso | en | ru_RU |
dc.publisher | БГУИР | ru_RU |
dc.subject | материалы конференций | ru_RU |
dc.subject | resonant tunneling structures | ru_RU |
dc.subject | current-voltage characteristics | ru_RU |
dc.subject | graphene | ru_RU |
dc.title | The influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunneling structures | ru_RU |
dc.type | Статья | ru_RU |
Appears in Collections: | Радиотехника и электроника : материалы 57-й научной конференции аспирантов, магистрантов и студентов (2021)
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