The influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunneling structures

Abstract

This article discusses the concept, essence and application areas of graphene-based four-barrier resonant tunneling structures (RTS). The purpose of this paper is to study the influence of various technological parameters on the electrical characteristics of RTS. The current-voltage characteristics of graphene-based resonant tunneling structures on silicon dioxide (SiO 2 ) and hexagonal boron nitride (h-BN) substrates are simulated for different widths of barriers and quantum wells. The calculations presented were carried out using a numerical model based on the Schrödinger equation.